 |  | | |
| PartNumber | SPU01N60C3BKMA1 | SPU01N60 | SPU01N60C3,01N60C3 |
| Description | MOSFET LOW POWER_LEGACY | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-251-3 | - | - |
| Tradename | CoolMOS | - | - |
| Packaging | Tube | - | - |
| Height | 6.22 mm | - | - |
| Length | 6.73 mm | - | - |
| Width | 2.38 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Product Type | MOSFET | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SP000012110 SPU01N60C3BKMA1 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
SPU01N60C3BKMA1 | MOSFET LOW POWER_LEGACY | |
| SPU01N60 | New and Original | ||
| SPU01N60C3,01N60C3 | New and Original | ||
| SPU01N60S5 | Power Field-Effect Transistor, 0.8A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | ||
| SPU01N60C3 | Power Field-Effect Transistor, 0.8A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | ||
Infineon Technologies |
SPU01N60C3BKMA1 | MOSFET N-CH 650V 0.8A TO-251 |