SPU01N60C

SPU01N60C3BKMA1 vs SPU01N60C3 vs SPU01N60C3,01N60C3

 
PartNumberSPU01N60C3BKMA1SPU01N60C3SPU01N60C3,01N60C3
DescriptionMOSFET LOW POWER_LEGACYPower Field-Effect Transistor, 0.8A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
ManufacturerInfineonINFINEON-
Product CategoryMOSFETFETs - Single-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-251-3--
TradenameCoolMOSCoolMOS-
PackagingTubeTube-
Height6.22 mm--
Length6.73 mm--
Width2.38 mm--
BrandInfineon Technologies--
Product TypeMOSFET--
SubcategoryMOSFETs--
Part # AliasesSP000012110 SPU01N60C3BKMA1--
Unit Weight0.139332 oz0.139332 oz-
Series-CoolMOS C3-
Part Aliases-SP000012110 SPU01N60C3BKMA1 SPU01N60C3XK-
Package Case-IPAK-3-
Number of Channels-1 Channel-
Configuration-Single-
Transistor Type-1 N-Channel-
Pd Power Dissipation-11 W-
Maximum Operating Temperature-+ 150 C-
Minimum Operating Temperature-- 55 C-
Fall Time-30 ns-
Rise Time-25 ns-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-800 mA-
Vds Drain Source Breakdown Voltage-600 V-
Rds On Drain Source Resistance-6 Ohms-
Transistor Polarity-N-Channel-
Typical Turn Off Delay Time-55 ns-
Typical Turn On Delay Time-30 ns-
Channel Mode-Enhancement-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
SPU01N60C3BKMA1 MOSFET LOW POWER_LEGACY
SPU01N60C3 Power Field-Effect Transistor, 0.8A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
SPU01N60C3,01N60C3 New and Original
Infineon Technologies
Infineon Technologies
SPU01N60C3BKMA1 MOSFET N-CH 650V 0.8A TO-251
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