PartNumber | SPU01N60C3BKMA1 | SPU01N60C3 | SPU01N60C3,01N60C3 |
Description | MOSFET LOW POWER_LEGACY | Power Field-Effect Transistor, 0.8A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | |
Manufacturer | Infineon | INFINEON | - |
Product Category | MOSFET | FETs - Single | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-251-3 | - | - |
Tradename | CoolMOS | CoolMOS | - |
Packaging | Tube | Tube | - |
Height | 6.22 mm | - | - |
Length | 6.73 mm | - | - |
Width | 2.38 mm | - | - |
Brand | Infineon Technologies | - | - |
Product Type | MOSFET | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | SP000012110 SPU01N60C3BKMA1 | - | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
Series | - | CoolMOS C3 | - |
Part Aliases | - | SP000012110 SPU01N60C3BKMA1 SPU01N60C3XK | - |
Package Case | - | IPAK-3 | - |
Number of Channels | - | 1 Channel | - |
Configuration | - | Single | - |
Transistor Type | - | 1 N-Channel | - |
Pd Power Dissipation | - | 11 W | - |
Maximum Operating Temperature | - | + 150 C | - |
Minimum Operating Temperature | - | - 55 C | - |
Fall Time | - | 30 ns | - |
Rise Time | - | 25 ns | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 800 mA | - |
Vds Drain Source Breakdown Voltage | - | 600 V | - |
Rds On Drain Source Resistance | - | 6 Ohms | - |
Transistor Polarity | - | N-Channel | - |
Typical Turn Off Delay Time | - | 55 ns | - |
Typical Turn On Delay Time | - | 30 ns | - |
Channel Mode | - | Enhancement | - |