PartNumber | SQ3426AEEV-T1_GE3 | SQ3425EV-T1_GE3 | SQ3426EV-T1_GE3 |
Description | MOSFET 60V Vds -/+20V Vgs AEC-Q101 Qualified | MOSFET P Ch -20Vds 12Vgs AEC-Q101 Qualified | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TSOP-6 | TSOP-6 | TSOP-6 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | P-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 20 V | 60 V |
Id Continuous Drain Current | 7 A | 7.4 A | 7 A |
Rds On Drain Source Resistance | 32 mOhms | 49 mOhms | 32 mOhms |
Vgs th Gate Source Threshold Voltage | 1.5 V | 1.4 V | 1.5 V |
Vgs Gate Source Voltage | 20 V | 12 V | 20 V |
Qg Gate Charge | 14 nC | 10.3 nC | 12 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 5 W | 5 W | 5 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Reel | Reel | Reel |
Series | SQ | SQ | SQ |
Transistor Type | 1 N-Channel | 1 P-Channel | 1 N-Channel |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 21 S | 9 S | 21 S |
Fall Time | 4 ns | 28 ns | 7 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 10 ns | 26 ns | 12 ns |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 20 ns | 41 ns | 19 ns |
Typical Turn On Delay Time | 7 ns | 11 ns | 9 ns |