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SQ398

SQ3985EV-T1_GE3 vs SQ3985EV vs SQ3985EV-T1-GE3

 
PartNumberSQ3985EV-T1_GE3SQ3985EVSQ3985EV-T1-GE3
DescriptionMOSFET P Ch -20Vds 8Vgs AEC-Q101 Qualified
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTSOP-6--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current3.9 A--
Rds On Drain Source Resistance130 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage8 V--
Qg Gate Charge4.6 nC, 4.6 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation3 W--
ConfigurationDual--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameTrenchFET--
PackagingReel--
SeriesSQ--
Transistor Type2 P-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min7 S, 7 S--
Fall Time20 ns, 20 ns--
Product TypeMOSFET--
Rise Time26 ns, 26 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time40 ns, 40 ns--
Typical Turn On Delay Time5 ns, 5 ns--
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix 		SQ3987EV-T1_GE3 MOSFET Dual P-Ch -30V AEC-Q101 Qualified
SQ3989EV-T1_GE3 MOSFET Dual P-Channel 30V TSOP-6
SQ3985EV-T1_GE3 MOSFET P Ch -20Vds 8Vgs AEC-Q101 Qualified
SQ3985EV New and Original
SQ3985EV-T1-GE3 New and Original
SQ3987EV-T1-GE3 New and Original
SQ3989EV-T1-GE3 New and Original
Vishay
Vishay 		SQ3985EV-T1_GE3 MOSFET 2 P-CH 20V 3.9A 6TSOP
SQ3987EV-T1_GE3 MOSFET 2 P-CHANNEL 30V 3A 6TSOP
SQ3989EV-T1_GE3 MOSFET 2 P-CH 30V 2.5A 6TSOP
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