SQ4840EY-T

SQ4840EY-T1_GE3 vs SQ4840EY-T1-GE3 vs SQ4840EY-T1-E3

 
PartNumberSQ4840EY-T1_GE3SQ4840EY-T1-GE3SQ4840EY-T1-E3
DescriptionMOSFET 40V 10A 1.56W AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 781-SQ4840EY_GE3
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSEE-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8SO-8-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current20.7 A--
Rds On Drain Source Resistance7.5 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge62 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation7.1 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
SeriesSQSQ-
Transistor Type1 N-Channel--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min45 S--
Fall Time17 ns--
Product TypeMOSFETMOSFET-
Rise Time11 ns--
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time45 ns--
Typical Turn On Delay Time14 ns--
Unit Weight0.006596 oz0.006596 oz-
Height-1.75 mm-
Length-4.9 mm-
Width-3.9 mm-
Part # Aliases-SQ4840EY-GE3-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SQ4840EY-T1_GE3 MOSFET 40V 10A 1.56W AEC-Q101 Qualified
SQ4840EY-T1-GE3 MOSFET RECOMMENDED ALT 781-SQ4840EY_GE3
SQ4840EY-T1-GE3 RF Bipolar Transistors MOSFET 40V 10A 1.56W 9.0mohm @ 10V
SQ4840EY-T1-E3 New and Original
Vishay
Vishay
SQ4840EY-T1_GE3 MOSFET N-CH 40V 20.7A
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