 | | | |
| PartNumber | SQ4850EY-T1-GE3 | SQ4850EY-T1 | SQ4850EY-T1-E3 |
| Description | N-CHANNEL 60-V (D-S) 175C MOSF | ||
| Manufacturer | VISHAY | - | - |
| Product Category | FETs - Single | - | - |
| Series | SQ Series | - | - |
| Packaging | Reel | - | - |
| Part Aliases | SQ4850EY-GE3 | - | - |
| Unit Weight | 0.017870 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Tradename | TrenchFET | - | - |
| Package Case | SO-8 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 6.8 W | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 12 A | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Rds On Drain Source Resistance | 22 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Qg Gate Charge | 20 nC | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQ4850EY-T1_GE3 | MOSFET 60V 12A 6.8W AEC-Q101 Qualified | |
| SQ4850EY-T1-GE3 | N-CHANNEL 60-V (D-S) 175C MOSF | ||
| SQ4850EY-T1 | New and Original | ||
| SQ4850EY-T1-E3 | New and Original | ||
Vishay |
SQ4850EY-T1_GE3 | MOSFET N-CH 60V 12A 8SOIC |