PartNumber | SQ9945BDY-T1-GE3 | SQ9945BE | SQ9945BEY |
Description | |||
Manufacturer | - | VISHAY | - |
Product Category | - | FETs - Arrays | - |
Series | - | TrenchFETR | - |
Packaging | - | Digi-ReelR Alternate Packaging | - |
Unit Weight | - | 0.017870 oz | - |
Mounting Style | - | SMD/SMT | - |
Tradename | - | TrenchFET | - |
Package Case | - | 8-SOIC (0.154", 3.90mm Width) | - |
Technology | - | Si | - |
Operating Temperature | - | -55°C ~ 175°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Supplier Device Package | - | 8-SO | - |
Configuration | - | Dual | - |
FET Type | - | 2 N-Channel (Dual) | - |
Power Max | - | 4W | - |
Drain to Source Voltage Vdss | - | 60V | - |
Input Capacitance Ciss Vds | - | 470pF @ 25V | - |
FET Feature | - | Logic Level Gate | - |
Current Continuous Drain Id 25°C | - | 5.4A | - |
Rds On Max Id Vgs | - | 64 mOhm @ 3.4A, 10V | - |
Vgs th Max Id | - | 2.5V @ 250μA | - |
Gate Charge Qg Vgs | - | 12nC @ 10V | - |
Pd Power Dissipation | - | 4 W | - |
Maximum Operating Temperature | - | + 175 C | - |
Minimum Operating Temperature | - | - 55 C | - |
Fall Time | - | 1.7 ns | - |
Rise Time | - | 2.8 ns | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 5.4 A | - |
Vds Drain Source Breakdown Voltage | - | 60 V | - |
Rds On Drain Source Resistance | - | 64 mOhms | - |
Transistor Polarity | - | N-Channel | - |
Typical Turn Off Delay Time | - | 17 nS | - |
Qg Gate Charge | - | 8 nC | - |