 |  | | |
| PartNumber | SQJ401EP-T1_GE3 | SQJ401EP-T2_GE3 | SQJ402EP-T1-GE3 |
| Description | MOSFET P-Channel 12V AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 78-SQJ411EP-T1_GE3 | MOSFET RECOMMENDED ALT 78-SQJ402EP-T1_GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SO-8L-4 | SO-8L-4 | PowerPAK-SO-8L-4 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 12 V | 12 V | - |
| Id Continuous Drain Current | 32 A | 32 A | - |
| Rds On Drain Source Resistance | 5 mOhms | 6 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 600 mV | - |
| Vgs Gate Source Voltage | 8 V | 8 V | - |
| Qg Gate Charge | 164 nC | 109 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 83 W | 83 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Height | 1.04 mm | - | 1.04 mm |
| Length | 6.15 mm | - | 6.15 mm |
| Series | SQ | SQ | SQ |
| Transistor Type | 1 P-Channel | - | - |
| Width | 5.13 mm | - | 5.13 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 60 S | - | - |
| Fall Time | 166 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 63 ns | - | - |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 263 ns | - | - |
| Typical Turn On Delay Time | 43 ns | - | - |
| Unit Weight | 0.017870 oz | - | 0.017870 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQJ407EP-T1_GE3 | MOSFET -30V Vds PowerPAK AEC-Q101 Qualified | |
| SQJ401EP-T1_GE3 | MOSFET P-Channel 12V AEC-Q101 Qualified | ||
| SQJ403EP-T1_GE3 | MOSFET P Ch -30Vds 20Vgs AEC-Q101 Qualified | ||
| SQJ402EP-T1_GE3 | MOSFET 100V 32A 27watt AEC-Q101 Qualified | ||
| SQJ403BEEP-T1_GE3 | MOSFET P Ch -30Vds 20Vgs AEC-Q101 Qualified | ||
| SQJ401EP-T2_GE3 | MOSFET RECOMMENDED ALT 78-SQJ411EP-T1_GE3 | ||
| SQJ402EP-T1-GE3 | MOSFET RECOMMENDED ALT 78-SQJ402EP-T1_GE3 | ||
| SQJ402EP-T1-GE3 | IGBT Transistors MOSFET 100V 32A 27watt N-CH Automotive | ||
| SQJ401EP-T1-GE3 | RF Bipolar Transistors MOSFET P-Channel 12V Automotive MOSFET | ||
| SQJ401EP-T1 | New and Original | ||
| SQJ401EPT1GE3 | Power Field-Effect Transistor, 32A I(D), 12V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SQJ402EP | New and Original | ||
| SQJ402EPT1GE3 | Power Field-Effect Transisto | ||
| SQJ403EEP | New and Original | ||
| SQJ403EEP-SO-8L | New and Original | ||
| SQJ403EEP-T1-GE3 | MOSFET P-Channel 30V Automotive MOSFET | ||
| SQJ403EEP-TE2-GE3 | New and Original | ||
Vishay |
SQJ409EP-T1_GE3 | MOSFET P-CH 40V 60A POWERPAKSO-8 | |
| SQJ402EP-T1_GE3 | MOSFET N-CH 100V POWERPAK SO8L | ||
| SQJ401EP-T1_GE3 | MOSFET P-CH 12V 32A POWERPAKSO-8 | ||
| SQJ403BEEP-T1_GE3 | MOSFET P-CH 30V 30A POWERPAKSO-8 | ||
| SQJ407EP-T1_GE3 | MOSFET P-CH 30V 60A POWERPAKSO-8 |