SQJ44

SQJ443EP-T1_GE3 vs SQJ446EP-T1_GE3 vs SQJ443EP-T1-GE3

 
PartNumberSQJ443EP-T1_GE3SQJ446EP-T1_GE3SQJ443EP-T1-GE3
DescriptionMOSFET P-Channel 40V AEC-Q101 QualifiedMOSFET N Ch 40Vds 20Vgs AEC-Q101 QualifiedRF Bipolar Transistors MOSFET P-Channel 40V Automotive MOSFET
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SO-8L-4PowerPAK-SO-8L-4-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current40 A60 A-
Rds On Drain Source Resistance29 mOhms3.7 mOhms-
Vgs th Gate Source Threshold Voltage1.5 V1.5 V-
Vgs Gate Source Voltage10 V20 V-
Qg Gate Charge38 nC65 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation83 W46 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
SeriesSQSQ-
Transistor Type1 P-Channel1 N-Channel-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min30 S125 S-
Fall Time29 ns14 ns-
Product TypeMOSFETMOSFET-
Rise Time14 ns18 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time45 ns24 ns-
Typical Turn On Delay Time7 ns8 ns-
Unit Weight0.017870 oz0.017870 oz-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SQJ443EP-T1_GE3 MOSFET P-Channel 40V AEC-Q101 Qualified
SQJ446EP-T1_GE3 MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified
SQJ443EP-T1-GE3 RF Bipolar Transistors MOSFET P-Channel 40V Automotive MOSFET
Vishay
Vishay
SQJ443EP-T1_GE3 MOSFET P-CH 40V 40A POWERPAKSO-8
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