PartNumber | SQJ858AEP-T1-GE3 | SQJ858AEP | SQJ858AEP-T1-G |
Description | MOSFET RECOMMENDED ALT 78-SQJ858AEP-T1_GE3 | ||
Manufacturer | Vishay | Vishay Siliconix | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PowerPAK-SO-8L-4 | - | - |
Qualification | AEC-Q101 | - | - |
Tradename | TrenchFET | TrenchFET | - |
Packaging | Reel | Digi-ReelR Alternate Packaging | - |
Height | 1.04 mm | - | - |
Length | 6.15 mm | - | - |
Series | SQ | TrenchFETR | - |
Width | 5.13 mm | - | - |
Brand | Vishay / Siliconix | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | SQJ848AEP-T1-GE3 | - | - |
Unit Weight | 0.017870 oz | 0.017870 oz | - |
Package Case | - | PowerPAKR SO-8 | - |
Operating Temperature | - | -55°C ~ 175°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Supplier Device Package | - | PowerPAKR SO-8 | - |
Configuration | - | Single | - |
FET Type | - | MOSFET N-Channel, Metal Oxide | - |
Power Max | - | 48W | - |
Drain to Source Voltage Vdss | - | 40V | - |
Input Capacitance Ciss Vds | - | 2450pF @ 20V | - |
FET Feature | - | Standard | - |
Current Continuous Drain Id 25°C | - | 58A (Tc) | - |
Rds On Max Id Vgs | - | 6.3 mOhm @ 14A, 10V | - |
Vgs th Max Id | - | 2.5V @ 250μA | - |
Gate Charge Qg Vgs | - | 55nC @ 10V | - |
Pd Power Dissipation | - | 48 W | - |
Maximum Operating Temperature | - | + 175 C | - |
Minimum Operating Temperature | - | - 55 C | - |
Fall Time | - | 8 ns | - |
Rise Time | - | 9 ns | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 58 A | - |
Vds Drain Source Breakdown Voltage | - | 40 V | - |
Vgs th Gate Source Threshold Voltage | - | 2 V | - |
Rds On Drain Source Resistance | - | 6.3 mOhms | - |
Transistor Polarity | - | N-Channel | - |
Typical Turn Off Delay Time | - | 26 ns | - |
Typical Turn On Delay Time | - | 10 ns | - |
Qg Gate Charge | - | 36 nC | - |