SQJ88

SQJ886EP-T1_GE3 vs SQJ886EP-T1-GE3 vs SQJ884EP-T1-GE3

 
PartNumberSQJ886EP-T1_GE3SQJ886EP-T1-GE3SQJ884EP-T1-GE3
DescriptionMOSFET 40V 60A 55W AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 781-SQJ886EP-T1_GE3
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CasePowerPAK-SO-8L-4--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current60 A--
Rds On Drain Source Resistance3.6 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge65 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation55 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
Height1.04 mm--
Length6.15 mm--
SeriesSQSQ-
Transistor Type1 N-Channel--
Width5.13 mm--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min105 S--
Fall Time6 ns--
Product TypeMOSFETMOSFET-
Rise Time17 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time29 ns--
Typical Turn On Delay Time8 ns--
Unit Weight0.017870 oz0.017870 oz-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SQJ886EP-T1_GE3 MOSFET 40V 60A 55W AEC-Q101 Qualified
SQJ886EP-T1-GE3 MOSFET RECOMMENDED ALT 781-SQJ886EP-T1_GE3
SQJ886EP-T1-GE3 RF Bipolar Transistors MOSFET 40V 60A 55W TrenchFET
SQJ884EP-T1-GE3 New and Original
Vishay
Vishay
SQJ886EP-T1_GE3 MOSFET N-CH 40V 60A PPAK SO-8
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