PartNumber | SQJ886EP-T1_GE3 | SQJ886EP-T1-GE3 | SQJ884EP-T1-GE3 |
Description | MOSFET 40V 60A 55W AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 781-SQJ886EP-T1_GE3 | |
Manufacturer | Vishay | Vishay | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | PowerPAK-SO-8L-4 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 40 V | - | - |
Id Continuous Drain Current | 60 A | - | - |
Rds On Drain Source Resistance | 3.6 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 65 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 55 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Tradename | TrenchFET | TrenchFET | - |
Packaging | Reel | Reel | - |
Height | 1.04 mm | - | - |
Length | 6.15 mm | - | - |
Series | SQ | SQ | - |
Transistor Type | 1 N-Channel | - | - |
Width | 5.13 mm | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | - |
Forward Transconductance Min | 105 S | - | - |
Fall Time | 6 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 17 ns | - | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 29 ns | - | - |
Typical Turn On Delay Time | 8 ns | - | - |
Unit Weight | 0.017870 oz | 0.017870 oz | - |