 |  | | |
| PartNumber | SQJ910AEP-T1_GE3 | SQJ910AEP-T2_GE3 | SQJ912AEP-T1-GE3 |
| Description | MOSFET Dual N-Channel 30V AEC-Q101 Qualified | MOSFET 30V Vds 20V Vgs PowerPAK SO-8L | MOSFET RECOMMENDED ALT 78-SQJ912AEP-T1_GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SO-8L-4 | PowerPAK SO-8 | PowerPAK-SO-8L-4 |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 30 A | 30 A | - |
| Rds On Drain Source Resistance | 5.8 mOhms, 5.8 mOhms | 7 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 1.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 39 nC, 39 nC | 39 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 48 W | 48 W | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Series | SQ | SQ | SQ |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 72 S, 72 S | 72 S | - |
| Fall Time | 7 ns, 7 ns | 7 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 3 ns, 3 ns | 3 ns | - |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 27 ns, 27 ns | 27 ns | - |
| Typical Turn On Delay Time | 11 ns, 11 ns | 11 ns | - |
| Unit Weight | 0.017870 oz | - | 0.017870 oz |
| Tradename | - | - | TrenchFET |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQJ912BEP-T1_GE3 | MOSFET Dual N-Ch 40V AEC-Q101 Qualified | |
| SQJ912AEP-T1_GE3 | MOSFET 40V 30A 48W AEC-Q101 Qualified | ||
| SQJ910AEP-T1_GE3 | MOSFET Dual N-Channel 30V AEC-Q101 Qualified | ||
| SQJ910AEP-T2_GE3 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8L | ||
| SQJ912AEP-T1-GE3 | MOSFET RECOMMENDED ALT 78-SQJ912AEP-T1_GE3 | ||
| SQJ910AEP | New and Original | ||
| SQJ910AEPT1GE3 | Power Field-Effect Transistor, 30A I(D), 30V, 0.007ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SQJ912 | New and Original | ||
| SQJ912AEP-T1 | New and Original | ||
| SQJ912AEP-T1-GE3 | DUAL N-CHANNEL 40-V (D-S) 175C | ||
| SQJ912EP | New and Original | ||
| SQJ912EP-T1-GE3 | MOSFET RECOMMENDED ALT 78-SQJ912AEP-T1_GE3 | ||
Vishay |
SQJ912AEP-T1_GE3 | MOSFET 2N-CH 40V 30A PPAK SO-8 | |
| SQJ912BEP-T1_GE3 | MOSFET N-CH DUAL 40V PPSO-8L |