PartNumber | SQJ952EP-T1_GE3 | SQJ951EP-T1_GE3 | SQJ956EP-T1_GE3 |
Description | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | MOSFET Dual P-Channel 30V AEC-Q101 Qualified | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-SO-8L-4 | PowerPAK-SO-8L-4 | PowerPAK-SO-8L-4 |
Number of Channels | 2 Channel | 2 Channel | 2 Channel |
Transistor Polarity | N-Channel | P-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 30 V | 60 V |
Id Continuous Drain Current | 23 A | 30 A | 23 A |
Rds On Drain Source Resistance | 12 mOhms | 14 mOhms | 22.3 mOhms, 22.3 mOhms |
Vgs th Gate Source Threshold Voltage | 1.5 V | 2.5 V | 1.5 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 30 nC, 30 nC | 50 nC | 30 nC, 30 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 25 W | 56 W | 34 W |
Configuration | Dual | Dual | Dual |
Channel Mode | Enhancement | Enhancement | Enhancement |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Reel | Reel | Reel |
Height | 1.04 mm | - | - |
Length | 6.15 mm | - | - |
Series | SQ | SQ | SQ |
Transistor Type | 2 N-Channel | 2 P-Channel | 2 N-Channel |
Width | 5.13 mm | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 68 S, 68 S | 18 S | 19 S, 19 S |
Fall Time | 9 ns, 9 ns | 28 ns | 6 ns, 6 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 6 ns, 6 ns | 12 ns | 11 ns, 11 ns |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 25 ns, 25 ns | 39 ns | 24 ns, 24 ns |
Typical Turn On Delay Time | 9 ns, 9 ns | 12 ns | 8 ns, 8 ns |
Unit Weight | 0.017870 oz | 0.017870 oz | 0.017870 oz |