SQJ963

SQJ963EP-T1_GE3 vs SQJ963EP-T1-GE3 vs SQJ963EP

 
PartNumberSQJ963EP-T1_GE3SQJ963EP-T1-GE3SQJ963EP
DescriptionMOSFET -60V -8A 27W AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 781-SQJ963EP-T1_GE3
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CasePowerPAK-SO-8L-4--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance67 mOhms, 67 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge40 nC, 40 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation27 W--
ConfigurationDual--
Channel ModeEnhancement--
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
Height1.04 mm--
Length6.15 mm--
SeriesSQSQ-
Transistor Type2 P-Channel--
Width5.13 mm--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min10 S, 10 S--
Fall Time8 ns, 8 ns--
Product TypeMOSFETMOSFET-
Rise Time13 ns, 13 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time36 ns, 36 ns--
Typical Turn On Delay Time11 ns--
Unit Weight0.017870 oz--
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SQJ963EP-T1_GE3 MOSFET -60V -8A 27W AEC-Q101 Qualified
SQJ963EP-T1-GE3 MOSFET RECOMMENDED ALT 781-SQJ963EP-T1_GE3
SQJ963EP-T1-GE3 IGBT Transistors MOSFET -60V -8A 27W TrenchFET
SQJ963EP New and Original
Vishay
Vishay
SQJ963EP-T1_GE3 MOSFET 2 P-CH 60V POWERPAK SO8
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