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| PartNumber | SQJ980AEP-T1_GE3 | SQJ980AEP | SQJ980AEP-T1-GE3 |
| Description | MOSFET Dual N-Channel 75V AEC-Q101 Qualified | DUAL N-CHANNEL 75-V (D-S) 175C | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAK-SO-8L-4 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 75 V | - | - |
| Id Continuous Drain Current | 17 A | - | - |
| Rds On Drain Source Resistance | 41 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 21 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 34 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Height | 1.04 mm | - | - |
| Length | 6.15 mm | - | - |
| Series | SQ | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Width | 5.13 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 14 S | - | - |
| Fall Time | 12 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 16 ns | - | - |
| Typical Turn On Delay Time | 9 ns | - | - |
| Unit Weight | 0.017870 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQJ980AEP-T1_GE3 | MOSFET Dual N-Channel 75V AEC-Q101 Qualified | |
| SQJ980AEP | New and Original | ||
| SQJ980AEP-T1-GE3 | DUAL N-CHANNEL 75-V (D-S) 175C | ||
| SQJ980AEPT1GE3 | Power Field-Effect Transistor, 17A I(D), 75V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
Vishay |
SQJ980AEP-T1_GE3 | MOSFET 2 N-CH 75V POWERPAK SO8 |