PartNumber | SQJB40EP-T1_GE3 | SQJB40EP | SQJB42EP-T1_GE3 |
Description | MOSFET Dual N-Ch 40V Vds AEC-Q101 Qualified | MOSFET 2 N-CH 40V POWERPAK SO8 | |
Manufacturer | Vishay | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | PowerPAK-SO-8L-4 | - | - |
Number of Channels | 2 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 40 V | - | - |
Id Continuous Drain Current | 30 A | - | - |
Rds On Drain Source Resistance | 6.3 mOhms, 6.3 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 35 nC, 35 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 34 W | - | - |
Configuration | Dual | - | - |
Channel Mode | Enhancement | - | - |
Qualification | AEC-Q101 | - | - |
Tradename | TrenchFET | - | - |
Packaging | Reel | - | - |
Height | 1.04 mm | - | - |
Length | 6.15 mm | - | - |
Series | SQ | - | - |
Transistor Type | 2 N-Channel | - | - |
Width | 5.13 mm | - | - |
Brand | Vishay / Siliconix | - | - |
Forward Transconductance Min | 48 S, 48 S | - | - |
Fall Time | 15 ns, 15 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 20 ns, 20 ns | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 18 ns, 18 ns | - | - |
Typical Turn On Delay Time | 7 ns, 7 ns | - | - |
Unit Weight | 0.017870 oz | - | - |