PartNumber | SQJB68EP-T1_GE3 | SQJB60EP-T1_GE3 | SQJB60EP-T2_GE3 |
Description | MOSFET 100V Vds 20V Vgs PowerPAK SO-8L | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | MOSFET 60V Vds 20V Vgs PowerPAK SO-8L |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK SO-8 | PowerPAK-SO-8L-4 | PowerPAK SO-8 |
Number of Channels | 2 Channel | 2 Channel | 2 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 60 V | 60 V |
Id Continuous Drain Current | 11 A | 30 A | 30 A |
Rds On Drain Source Resistance | 92 mOhms | 10 mOhms | 12 mOhms |
Vgs th Gate Source Threshold Voltage | 1.5 V | 1.5 V | 1.5 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 8 nC | 30 nC, 30 nC | 30 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 27 W | 48 W | 48 W |
Configuration | Dual | Dual | Dual |
Channel Mode | Enhancement | Enhancement | Enhancement |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Packaging | Reel | Reel | Reel |
Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 8.6 S | 43 S, 43 S | 43 S |
Fall Time | 5 ns | 25 ns, 25 ns | 25 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 5 ns | 3 ns, 3 ns | 3 ns |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 15 ns | 23 ns, 23 ns | 23 ns |
Typical Turn On Delay Time | 9 ns | 10 ns, 10 ns | 10 ns |
Series | - | SQ | SQ |
Unit Weight | - | 0.017870 oz | - |