PartNumber | SQJQ402E-T1_GE3 | SQJQ100E-T1_GE3 | SQJQ100EL-T1_GE3 |
Description | MOSFET N-Channel 40V AEC-Q101 Qualified | MOSFET 40V Vds 160A Id AEC-Q101 Qualified | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-8x8L-4 | PowerPAK-8x8L-4 | PowerPAK-8x8L-4 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
Id Continuous Drain Current | 200 A | 160 A | 160 A |
Rds On Drain Source Resistance | 1.3 mOhms | 900 uOhms | 900 uOhms |
Vgs th Gate Source Threshold Voltage | 1.5 V | 1.5 V | 1.5 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 260 nC | 220 nC | 220 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 150 W | 136 W | 136 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Reel | Reel | Reel |
Series | SQ | SQ | SQ |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 140 S | 122 S | 122 S |
Fall Time | 11 ns | 30 ns | 30 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 15 ns | 60 ns | 60 ns |
Factory Pack Quantity | 2000 | 2000 | 2000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 69 ns | 60 ns | 60 ns |
Typical Turn On Delay Time | 19 ns | 24 ns | 24 ns |
Height | - | - | 1.9 mm |
Length | - | - | 7.9 mm |
Width | - | - | 6.22 mm |