 |  | | |
| PartNumber | SQM100N04-2m7_GE3 | SQM100N04-2M7-GE3 | SQM100N04-3M5 |
| Description | MOSFET 40V 100A 157W AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 78-SQM100N04-2M7_GE3 | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 2.25 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 145 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 157 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Height | 4.83 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | SQ | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.65 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 201 S | - | - |
| Fall Time | 9 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 11 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 48 ns | - | - |
| Typical Turn On Delay Time | 14 ns | - | - |
| Unit Weight | 0.068654 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQM100N04-2m7_GE3 | MOSFET 40V 100A 157W AEC-Q101 Qualified | |
| SQM100N04-2M7-GE3 | MOSFET RECOMMENDED ALT 78-SQM100N04-2M7_GE3 | ||
| SQM100N04-3M5 | New and Original | ||
| SQM100N04-3M5-GE3 | MOSFET RECOMMENDED ALT 78-SQM100N04-2M7_GE3 | ||
Vishay |
SQM100N04-2M7_GE3 | MOSFET N-CH 40V 100A TO-263 |