PartNumber | SQM110N05-06L_GE3 | SQM110N05-06L-GE3 | SQM110N05-06L |
Description | MOSFET 55V 110A 158W AEC-Q101 Qualified | RF Bipolar Transistors MOSFET 55V 110A 158W 6.0mohm @ 10V | |
Manufacturer | Vishay | - | - |
Product Category | MOSFET | - | - |
RoHS | E | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TO-263-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 55 V | - | - |
Id Continuous Drain Current | 110 A | - | - |
Rds On Drain Source Resistance | 4.7 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 110 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 157 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Qualification | AEC-Q101 | - | - |
Tradename | TrenchFET | - | - |
Packaging | Reel | - | - |
Series | SQ | - | - |
Transistor Type | 1 N-Channel | - | - |
Brand | Vishay / Siliconix | - | - |
Forward Transconductance Min | 90 S | - | - |
Fall Time | 13 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 13 ns | - | - |
Factory Pack Quantity | 800 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 37 ns | - | - |
Typical Turn On Delay Time | 12 ns | - | - |
Unit Weight | 0.050717 oz | - | - |