SQM120N03

SQM120N03-1m5L_GE3 vs SQM120N03-1M5L-GE3 vs SQM120N03-1M5L

 
PartNumberSQM120N03-1m5L_GE3SQM120N03-1M5L-GE3SQM120N03-1M5L
DescriptionMOSFET 30V 120A 375W AEC-Q101 QualifiedRF Bipolar Transistors MOSFET 30V 120A 375W TrenchFET
ManufacturerVishayVISHAY-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current120 A--
Rds On Drain Source Resistance1.4 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge270 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation375 W--
ConfigurationSingleSingle-
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameTrenchFETTrenchFET-
PackagingReelReel-
SeriesSQSQ Series-
Transistor Type1 N-Channel1 N-Channel-
BrandVishay / Siliconix--
Forward Transconductance Min190 S--
Fall Time11 ns11 ns-
Product TypeMOSFET--
Rise Time11 ns11 ns-
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time64 ns64 ns-
Typical Turn On Delay Time18 ns18 ns-
Unit Weight0.068654 oz0.068654 oz-
Package Case-TO-263-3-
Pd Power Dissipation-375 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-120 A-
Vds Drain Source Breakdown Voltage-30 V-
Vgs th Gate Source Threshold Voltage-2 V-
Rds On Drain Source Resistance-1.5 mOhms-
Qg Gate Charge-179 nC-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SQM120N03-1m5L_GE3 MOSFET 30V 120A 375W AEC-Q101 Qualified
SQM120N03-1M5L-GE3 RF Bipolar Transistors MOSFET 30V 120A 375W TrenchFET
SQM120N03-1M5L New and Original
Vishay
Vishay
SQM120N03-1M5L_GE3 MOSFET N-CH 30V 120A TO-263
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