PartNumber | SQM120N03-1m5L_GE3 | SQM120N03-1M5L-GE3 | SQM120N03-1M5L |
Description | MOSFET 30V 120A 375W AEC-Q101 Qualified | RF Bipolar Transistors MOSFET 30V 120A 375W TrenchFET | |
Manufacturer | Vishay | VISHAY | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-263-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 120 A | - | - |
Rds On Drain Source Resistance | 1.4 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 270 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 375 W | - | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | - | - |
Qualification | AEC-Q101 | - | - |
Tradename | TrenchFET | TrenchFET | - |
Packaging | Reel | Reel | - |
Series | SQ | SQ Series | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | Vishay / Siliconix | - | - |
Forward Transconductance Min | 190 S | - | - |
Fall Time | 11 ns | 11 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 11 ns | 11 ns | - |
Factory Pack Quantity | 800 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 64 ns | 64 ns | - |
Typical Turn On Delay Time | 18 ns | 18 ns | - |
Unit Weight | 0.068654 oz | 0.068654 oz | - |
Package Case | - | TO-263-3 | - |
Pd Power Dissipation | - | 375 W | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 120 A | - |
Vds Drain Source Breakdown Voltage | - | 30 V | - |
Vgs th Gate Source Threshold Voltage | - | 2 V | - |
Rds On Drain Source Resistance | - | 1.5 mOhms | - |
Qg Gate Charge | - | 179 nC | - |