SQM120N04

SQM120N04-1m7_GE3 vs SQM120N04-1m7L_GE3 vs SQM120N04-1M7L-GE3

 
PartNumberSQM120N04-1m7_GE3SQM120N04-1m7L_GE3SQM120N04-1M7L-GE3
DescriptionMOSFET 40V 120A 375W AEC-Q101 QualifiedMOSFET 40V 120A 375W AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 781-SQM120N041M7LGE
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYEE
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current120 A120 A-
Rds On Drain Source Resistance1.4 mOhms1.4 mOhms-
Vgs th Gate Source Threshold Voltage2.5 V1.5 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge310 nC285 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation375 W375 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101AEC-Q101
TradenameTrenchFETTrenchFETTrenchFET
PackagingReelReelReel
Height4.83 mm4.83 mm-
Length10.67 mm10.67 mm-
SeriesSQSQSQ
Transistor Type1 N-Channel1 N-Channel-
Width9.65 mm9.65 mm-
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min198 S212 S-
Fall Time12 ns12 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time21 ns10 ns-
Factory Pack Quantity800800800
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time68 ns74 ns-
Typical Turn On Delay Time26 ns15 ns-
Unit Weight0.077603 oz0.050717 oz0.050717 oz
Part # Aliases--SQM110N04-02L-GE3
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SQM120N04-1m7_GE3 MOSFET 40V 120A 375W AEC-Q101 Qualified
SQM120N04-1m7L_GE3 MOSFET 40V 120A 375W AEC-Q101 Qualified
SQM120N04-1m9_GE3 MOSFET 40V 120A 300W AEC-Q101 Qualified
SQM120N04-1M7L-GE3 MOSFET RECOMMENDED ALT 781-SQM120N041M7LGE
SQM120N04-1M9-GE3 MOSFET RECOMMENDED ALT 781-SQM120N041M9GE
SQM120N04-1M7L-GE3 Darlington Transistors MOSFET 40V 120A 375W NCh Automotive
SQM120N04-1M7-GE3 RF Bipolar Transistors MOSFET 40V 120A 375W
SQM120N04-1M9-GE3 RF Bipolar Transistors MOSFET 40V 120A 300W TrenchFET
SQM120N04-02L New and Original
SQM120N04-02L-GE3 New and Original
SQM120N04-03 New and Original
SQM120N04-04 New and Original
SQM120N04-1M7 New and Original
SQM120N04-1M7L New and Original
SQM120N04-1M8 New and Original
SQM120N04-1M9 New and Original
SQM120N04-2M1 New and Original
SQM120N04-2M1-GE3 120 A, 40 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
SQM120N041M9GE3 Power Field-Effect Transistor, 120A I(D), 40V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Vishay
Vishay
SQM120N04-1M9_GE3 MOSFET N-CH 40V 120A TO263
SQM120N04-1M7_GE3 MOSFET N-CH 40V 120A TO263
SQM120N04-1M7L_GE3 MOSFET N-CH 40V 120A TO263
SQM120N04-1M4L_GE3 N-CHANNEL 40-V (D-S) 175C MOSFET
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