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| PartNumber | SQM120N06-3m5L_GE3 | SQM120N06-3M5L-GE3 | SQM120N06-3M5L |
| Description | MOSFET 60 V 120A 375 W AEC-Q101 Qualified | RF Bipolar Transistors MOSFET 60 V 120A 375 W | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 120 A | - | - |
| Rds On Drain Source Resistance | 2.8 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 330 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 375 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Height | 4.83 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | SQ | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.65 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 190 S | - | - |
| Fall Time | 35 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 23 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 83 ns | - | - |
| Typical Turn On Delay Time | 19 ns | - | - |
| Unit Weight | 0.077603 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQM120N06-3m5L_GE3 | MOSFET 60 V 120A 375 W AEC-Q101 Qualified | |
| SQM120N06-3M5L-GE3 | RF Bipolar Transistors MOSFET 60 V 120A 375 W | ||
| SQM120N06-3M5L | New and Original | ||
Vishay |
SQM120N06-3M5L_GE3 | MOSFET N-CH 60V 120A TO263 |