SQM120P0

SQM120P04-04L_GE3 vs SQM120P04-04L-GE3 vs SQM120P04-04L

 
PartNumberSQM120P04-04L_GE3SQM120P04-04L-GE3SQM120P04-04L
DescriptionMOSFET P-Channel 40V AEC-Q101 QualifiedRF Bipolar Transistors MOSFET P-Channel 40V Automotive MOSFET
ManufacturerVishayVishay / Siliconix-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current120 A--
Rds On Drain Source Resistance3.4 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge330 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation375 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameTrenchFETTrenchFET-
PackagingReelReel-
SeriesSQSQ Series-
Transistor Type1 P-Channel1 P-Channel-
BrandVishay / Siliconix--
Forward Transconductance Min97 S--
Fall Time45 ns--
Product TypeMOSFET--
Rise Time15 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time112 ns--
Typical Turn On Delay Time17 ns--
Unit Weight0.077603 oz0.068654 oz-
Package Case-TO-263-3-
Vds Drain Source Breakdown Voltage-- 40 V-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SQM120P06-07L_GE3 MOSFET 60 V 120A 375 W AEC-Q101 Qualified
SQM120P04-04L_GE3 MOSFET P-Channel 40V AEC-Q101 Qualified
SQM120P06-07L-GE3 MOSFET RECOMMENDED ALT 78-SQM120P06-07L_GE3
SQM120P04-04L-GE3 RF Bipolar Transistors MOSFET P-Channel 40V Automotive MOSFET
SQM120P06-07L_GE3-CUT TAPE New and Original
SQM120P04-04L New and Original
SQM120P06 New and Original
SQM120P06-07L New and Original
SQM120P06-07L-GE3 P-CHANNEL 60-V (D-S) 175C MOSF
Vishay
Vishay
SQM120P04-04L_GE3 MOSFET P-CH 40V 120A TO-263
SQM120P06-07L_GE3 MOSFET P-CH 60V 120A TO263
Top