SQM200N04-1m7

SQM200N04-1m7L_GE3 vs SQM200N04-1M7L-GE3 vs SQM200N04-1M7L

 
PartNumberSQM200N04-1m7L_GE3SQM200N04-1M7L-GE3SQM200N04-1M7L
DescriptionMOSFET 40V 200A 375 AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 781-SQM200N041M7LGE
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CaseTO-263-7--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current200 A--
Rds On Drain Source Resistance1.2 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge291 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation375 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
Height4.82 mm--
Length10.41 mm--
SeriesSQSQ-
Transistor Type1 N-Channel--
Width9.65 mm--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min181 S--
Fall Time16 ns--
Product TypeMOSFETMOSFET-
Rise Time17 ns--
Factory Pack Quantity800800-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time70 ns--
Typical Turn On Delay Time22 ns--
Unit Weight0.056438 oz0.056438 oz-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SQM200N04-1m7L_GE3 MOSFET 40V 200A 375 AEC-Q101 Qualified
SQM200N04-1M7L-GE3 MOSFET RECOMMENDED ALT 781-SQM200N041M7LGE
SQM200N04-1M7L-GE3 RF Bipolar Transistors MOSFET 40V 200A 375 TrenchFET
SQM200N04-1M7L New and Original
Vishay
Vishay
SQM200N04-1M7L_GE3 MOSFET N-CH 40V 200A TO-263
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