PartNumber | SQM60N20-35_GE3 | SQM60N20-35-GE3 | SQM60N20-35 |
Description | MOSFET N-Channel 200V AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 78-SQM60N20-35_GE3 | |
Manufacturer | Vishay | Vishay | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-263-3 | TO-263-3 | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 200 V | - | - |
Id Continuous Drain Current | 60 A | - | - |
Rds On Drain Source Resistance | 28 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 135 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 375 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Tradename | TrenchFET | TrenchFET | - |
Series | SQ | SQ | - |
Transistor Type | 1 N-Channel | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | - |
Forward Transconductance Min | 67 S | - | - |
Fall Time | 20 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 40 ns | - | - |
Factory Pack Quantity | 800 | 800 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 35 ns | - | - |
Typical Turn On Delay Time | 20 ns | - | - |
Unit Weight | 0.077603 oz | 0.077603 oz | - |
Height | - | 4.83 mm | - |
Length | - | 10.67 mm | - |
Width | - | 9.65 mm | - |