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SQP12

SQP120N06-06_GE3 vs SQP120N06-3M5L-GE3 vs SQP120N06-06

 
PartNumberSQP120N06-06_GE3SQP120N06-3M5L-GE3SQP120N06-06
DescriptionMOSFET N Ch 60Vds 20Vgs AEC-Q101 QualifiedRF Bipolar Transistors MOSFET 60V 119A 175W TrenchFET
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current119 A--
Rds On Drain Source Resistance4.5 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge145 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation175 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameTrenchFET--
PackagingTube--
SeriesSQ--
Transistor Type1 N-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min94 S--
Fall Time9 ns--
Product TypeMOSFET--
Rise Time14 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time34 ns--
Typical Turn On Delay Time16 ns--
Unit Weight0.063493 oz--
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix 		SQP120P06-6M7L_GE3 MOSFET P-Ch -60V AEC-Q101 Qualified
SQP120N06-06_GE3 MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified
SQP120N06-3m5L_GE3 MOSFET 60V 119A 175W AEC-Q101 Qualified
SQP120N06-3M5L-GE3 RF Bipolar Transistors MOSFET 60V 119A 175W TrenchFET
SQP120N06-06 New and Original
SQP120N10-09 New and Original
SQP120N10-3M8 New and Original
SQP120N10-3M8-GE3 Trans MOSFET N-CH 100V 120A 3-Pin TO-220 T/R (Alt: SQP120N10-3M8_GE3)
Vishay
Vishay 		SQP120N06-06_GE3 MOSFET N-CH 60V 119A TO220AB
SQP120N06-3M5L_GE3 MOSFET N-CH 60V 120A TO220AB
SQP120N06-6M7_GE3 N-CHANNEL 60-V (D-S) 175C MOSFET
SQP120N10-09_GE3 MOSFET N-CH 100V 120A TO220AB
SQP120N10-3M8_GE3 MOSFET N-CH 100V 120A TO220AB
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