SQS4

SQS482ENW-T1_GE3 vs SQS484EN-T1_GE3 vs SQS484EN-T1-GE3

 
PartNumberSQS482ENW-T1_GE3SQS484EN-T1_GE3SQS484EN-T1-GE3
DescriptionMOSFET 30V Vds -/+20V Vgs PowerPAK 1212-8WMOSFET 40V 16A 62W AEC-Q101 QualifiedTrans MOSFET N-CH 40V 16A Automotive 8-Pin PowerPAK 1212 EP T/R
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-1212-8W-8PowerPAK-1212-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V40 V-
Id Continuous Drain Current16 A16 A-
Rds On Drain Source Resistance7 mOhms8 mOhms-
Vgs th Gate Source Threshold Voltage2 V1.5 V-
Vgs Gate Source Voltage10 V20 V-
Qg Gate Charge26 nC39 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation62 W62 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
Transistor Type1 N-Channel1 N-Channel-
BrandVishay / SiliconixVishay / Siliconix-
Fall Time18 ns20 ns-
Product TypeMOSFETMOSFET-
Rise Time21 ns14 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time49 ns48 ns-
Typical Turn On Delay Time7 ns8 ns-
Qualification-AEC-Q101-
Height-1.04 mm-
Length-3.3 mm-
Series-SQ-
Width-3.3 mm-
Forward Transconductance Min-77 S-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SQS482ENW-T1_GE3 MOSFET 30V Vds -/+20V Vgs PowerPAK 1212-8W
SQS484ENW-T1_GE3 MOSFET N-Channel 40V PowerPAK 1212-8W
SQS484EN-T1_GE3 MOSFET 40V 16A 62W AEC-Q101 Qualified
SQS484EN-T1-GE3 Trans MOSFET N-CH 40V 16A Automotive 8-Pin PowerPAK 1212 EP T/R
SQS484ENT1GE3 Power Field-Effect Transistor, 16A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
SQS484ENW-T1-GE3 New and Original
Vishay
Vishay
SQS484EN-T1_GE3 MOSFET N-CH 40V 16A 1212-8
SQS484ENW-T1_GE3 MOSFET N-CH 40V 16A POWERPAK1212
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