SQS482

SQS482ENW-T1_GE3 vs SQS482EN-T1_GE3 vs SQS482EN-T1-GE3

 
PartNumberSQS482ENW-T1_GE3SQS482EN-T1_GE3SQS482EN-T1-GE3
DescriptionMOSFET 30V Vds -/+20V Vgs PowerPAK 1212-8WMOSFET 30V 16A 62W AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 781-SQS482EN-T1_GE3
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerPAK-1212-8W-8PowerPAK-1212-8PowerPAK-1212-8
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current16 A16 A-
Rds On Drain Source Resistance7 mOhms7 mOhms-
Vgs th Gate Source Threshold Voltage2 V1.5 V-
Vgs Gate Source Voltage10 V20 V-
Qg Gate Charge26 nC39 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation62 W62 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameTrenchFETTrenchFETTrenchFET
PackagingReelReelReel
Transistor Type1 N-Channel1 N-Channel-
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Fall Time18 ns18 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time21 ns21 ns-
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time49 ns49 ns-
Typical Turn On Delay Time7 ns7 ns-
Qualification-AEC-Q101AEC-Q101
Height-1.04 mm1.04 mm
Length-3.3 mm3.3 mm
Series-SQSQ
Width-3.3 mm3.3 mm
Forward Transconductance Min-70 S-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SQS482ENW-T1_GE3 MOSFET 30V Vds -/+20V Vgs PowerPAK 1212-8W
SQS482EN-T1_GE3 MOSFET 30V 16A 62W AEC-Q101 Qualified
SQS482EN-T1-GE3 MOSFET RECOMMENDED ALT 781-SQS482EN-T1_GE3
SQS482EN-T1-GE3 IGBT Transistors MOSFET 30V 16A 62W TrenchFET
Vishay
Vishay
SQS482EN-T1_GE3 MOSFET N-CH 30V 16A 1212-8
Top