PartNumber | SQS482ENW-T1_GE3 | SQS482EN-T1_GE3 | SQS482EN-T1-GE3 |
Description | MOSFET 30V Vds -/+20V Vgs PowerPAK 1212-8W | MOSFET 30V 16A 62W AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 781-SQS482EN-T1_GE3 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-1212-8W-8 | PowerPAK-1212-8 | PowerPAK-1212-8 |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
Id Continuous Drain Current | 16 A | 16 A | - |
Rds On Drain Source Resistance | 7 mOhms | 7 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2 V | 1.5 V | - |
Vgs Gate Source Voltage | 10 V | 20 V | - |
Qg Gate Charge | 26 nC | 39 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 62 W | 62 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Reel | Reel | Reel |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Fall Time | 18 ns | 18 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 21 ns | 21 ns | - |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 49 ns | 49 ns | - |
Typical Turn On Delay Time | 7 ns | 7 ns | - |
Qualification | - | AEC-Q101 | AEC-Q101 |
Height | - | 1.04 mm | 1.04 mm |
Length | - | 3.3 mm | 3.3 mm |
Series | - | SQ | SQ |
Width | - | 3.3 mm | 3.3 mm |
Forward Transconductance Min | - | 70 S | - |