PartNumber | SSM3J331R,LF | SSM3J331R | SSM3J331R,LF(T |
Description | MOSFET P-Ch U-MOSVI FET ID -4A -20VDSS 630pF | ||
Manufacturer | Toshiba | 30000TOSHIBA | - |
Product Category | MOSFET | IC Chips | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-23-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 20 V | - | - |
Id Continuous Drain Current | 4 A | - | - |
Rds On Drain Source Resistance | 150 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1 V | - | - |
Vgs Gate Source Voltage | 8 V | - | - |
Qg Gate Charge | 10.4 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 1 W | - | - |
Configuration | Single | - | - |
Packaging | Reel | - | - |
Height | 0.9 mm | - | - |
Length | 2.9 mm | - | - |
Series | SSM3J331 | - | - |
Transistor Type | 1 P-Channel | - | - |
Width | 1.3 mm | - | - |
Brand | Toshiba | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Unit Weight | 0.000282 oz | - | - |