PartNumber | SSM3J56ACT,L3F | SSM3J56ACT,L3F(B | SSM3J56ACT |
Description | MOSFET Nch MOSFET | ||
Manufacturer | Toshiba | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | CST3-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 20 V | - | - |
Id Continuous Drain Current | 1.4 A | - | - |
Rds On Drain Source Resistance | 4 Ohms | - | - |
Vgs th Gate Source Threshold Voltage | 1 V | - | - |
Vgs Gate Source Voltage | 8 V | - | - |
Qg Gate Charge | 1.6 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 500 mW (1/2 W) | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | - | - |
Height | 0.38 mm | - | - |
Length | 1 mm | - | - |
Series | SSM3J56 | - | - |
Transistor Type | 1 P-Channel | - | - |
Width | 0.6 mm | - | - |
Brand | Toshiba | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 10000 | - | - |
Subcategory | MOSFETs | - | - |