PartNumber | SSM6J503NU,LF | SSM6J501NU,LF | SSM6J502NU,LF |
Description | MOSFET SM Sig P-CH MOS ID -6A -20V -8 VGSS | MOSFET PWR MGT 1.5V Drive P-Ch MOS -20V | MOSFET SM Sig P-CH MOS ID -6A -20V -8 VGSS |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | - | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | UDFN6B-6 | UDFN6B-6 | UDFN6B-6 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | P-Channel | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 20 V | 20 V | 20 V |
Id Continuous Drain Current | 6 A | 10 A | 6 A |
Rds On Drain Source Resistance | 89.6 mOhms | 15.3 mOhms | 60.5 mOhms |
Vgs Gate Source Voltage | 8 V | 4.5 V | 8 V |
Pd Power Dissipation | 1 W | 2 W | 1 W |
Configuration | Single | Single | Single |
Packaging | Reel | Reel | Reel |
Height | 0.75 mm | 0.75 mm | 0.75 mm |
Length | 2 mm | 2 mm | 2 mm |
Series | SSM6J503 | SSM6J501 | SSM6J502 |
Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
Width | 2 mm | 2 mm | 2 mm |
Brand | Toshiba | Toshiba | Toshiba |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Vgs th Gate Source Threshold Voltage | - | 300 mV | - |
Qg Gate Charge | - | 29.9 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Channel Mode | - | Enhancement | - |
Typical Turn Off Delay Time | - | 201 ns | - |
Typical Turn On Delay Time | - | 45.2 ns | - |