SSM6L09

SSM6L09FUTE85LF vs SSM6L09FU vs SSM6L09FURSONYF

 
PartNumberSSM6L09FUTE85LFSSM6L09FUSSM6L09FURSONYF
DescriptionMOSFET N-Ch P-Ch Sg FET 0.4A -0.2A 30V -30V
ManufacturerToshibaTOSHIBA-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-363-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current400 mA--
Rds On Drain Source Resistance4 Ohms--
Vgs th Gate Source Threshold Voltage1.8 V--
Pd Power Dissipation300 mW--
ConfigurationDual--
PackagingReel--
Height0.9 mm--
Length2 mm--
SeriesSSM6L09--
Transistor Type1 N-Channel, 1 P-Channel--
Width1.25 mm--
BrandToshiba--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time68 ns, 85 ns--
Typical Turn On Delay Time72 ns, 85 ns--
Unit Weight0.000265 oz--
Manufacturer Part # Description RFQ
Toshiba
Toshiba
SSM6L09FUTE85LF MOSFET N-Ch P-Ch Sg FET 0.4A -0.2A 30V -30V
SSM6L09FUTE85LF MOSFET N-Ch P-Ch Sg FET 0.4A -0.2A 30V -30V
SSM6L09FU New and Original
SSM6L09FURSONYF New and Original
Top