SSM6L14

SSM6L14FE(TE85L,F) vs SSM6L14FE vs SSM6L14FE (TE85L,F)

 
PartNumberSSM6L14FE(TE85L,F)SSM6L14FESSM6L14FE (TE85L,F)
DescriptionMOSFET LowON Res MOSFET ID=0.8A VDSS=20V
ManufacturerToshibaTOSHIBA-
Product CategoryMOSFETIC Chips-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-563-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current80 mA, 720 mA--
Rds On Drain Source Resistance240 mOhms, 300 mOhms--
Vgs th Gate Source Threshold Voltage350 mV, 1 V--
Vgs Gate Source Voltage10 V, 8 V--
Qg Gate Charge2 nC, 1.76 nC--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation150 mW--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Height0.55 mm--
Length1.6 mm--
SeriesSSM6L14FE--
Width1.2 mm--
BrandToshiba--
Forward Transconductance Min1.05 S, 850 mS--
Product TypeMOSFET--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time50 ns, 38 ns--
Typical Turn On Delay Time18 ns, 11 ns--
Unit Weight0.000106 oz--
Manufacturer Part # Description RFQ
Toshiba
Toshiba
SSM6L14FE(TE85L,F) MOSFET LowON Res MOSFET ID=0.8A VDSS=20V
SSM6L14FE New and Original
SSM6L14FE (TE85L,F) New and Original
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