SSM6L6

SSM6L61NU,LF vs SSM6L61NU vs SSM6L61NU LF

 
PartNumberSSM6L61NU,LFSSM6L61NUSSM6L61NU LF
DescriptionMOSFET Small-signal MOSFET 2 in 1 Nch+Pch ID:4A
ManufacturerToshibaToshiba Semiconductor and Storage-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseUDFN-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current4 A--
Rds On Drain Source Resistance108 mOhms, 157 mOhms--
Vgs th Gate Source Threshold Voltage400 mV, 500 mV--
Vgs Gate Source Voltage8 V, 12 V--
Qg Gate Charge3.6 nC, 6.74 nC--
Minimum Operating Temperature---
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReelDigi-ReelR Alternate Packaging-
Height0.75 mm--
Length2 mm--
ProductMOSFETs--
SeriesUMOSIX--
Transistor Type1 N-Channel, 1 P-Channel--
TypeSilicon P-/N-Channel MOS--
Width2 mm--
BrandToshiba--
Forward Transconductance Min12 S, 9.5 S--
Fall Time---
Product TypeMOSFET--
Rise Time---
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time45 ns, 54 ns--
Typical Turn On Delay Time25 ns, 21 ns--
Package Case-6-WDFN Exposed Pad-
Operating Temperature---
Mounting Type-Sub-Base Mount-
Supplier Device Package-6-UDFN (2x2)-
FET Type-N and P-Channel-
Power Max---
Drain to Source Voltage Vdss-20V-
Input Capacitance Ciss Vds---
FET Feature-Standard-
Current Continuous Drain Id 25°C-4A-
Rds On Max Id Vgs---
Vgs th Max Id---
Gate Charge Qg Vgs---
Manufacturer Part # Description RFQ
Toshiba
Toshiba
SSM6L61NU,LF MOSFET Small-signal MOSFET 2 in 1 Nch+Pch ID:4A
SSM6L61NU New and Original
SSM6L61NULF Pb-F UDFN6 Small-signal MOSFET 2 in 1 Nch+Pch ID: 4A - Tape and Reel (Alt: SSM6L61NU,LF)
SSM6L61NU LF New and Original
Top