 |  | | |
| PartNumber | SSM6N39TU,LF | SSM6N39TU | SSM6N39TU(RSONYF) |
| Description | MOSFET LowON Res MOSFET ID=1.6A VDSS=20V | ||
| Manufacturer | Toshiba | TOSHIBA | - |
| Product Category | MOSFET | IC Chips | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | UF-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 1.6 A | - | - |
| Rds On Drain Source Resistance | 87 mOhms, 87 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 350 mV | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 7.5 nC, 7.5 nC | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 500 mW | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Series | SSM6N39TU | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Brand | Toshiba | - | - |
| Forward Transconductance Min | 2.5 S, 2.5 S | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 8.3 ns, 8.3 ns | - | - |
| Typical Turn On Delay Time | 11.5 ns, 11.5 ns | - | - |
| Unit Weight | 0.000247 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
SSM6N39TU,LF | MOSFET LowON Res MOSFET ID=1.6A VDSS=20V | |
| SSM6N39TU | New and Original | ||
| SSM6N39TU(RSONYF) | New and Original |