SSM6N56

SSM6N56FE,LM vs SSM6N56FE vs SSM6N56FELMCB

 
PartNumberSSM6N56FE,LMSSM6N56FESSM6N56FELMCB
DescriptionMOSFET Small-signal MOSFET N-Channel
ManufacturerToshibaToshiba Semiconductor and Storage-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseES6-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current800 mA--
Rds On Drain Source Resistance235 mOhms, 235 mOhms--
Vgs th Gate Source Threshold Voltage400 mV--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge1 nC, 1 nC--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation250 mW--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReelDigi-ReelR Alternate Packaging-
Height0.55 mm--
Length1.6 mm--
SeriesSSM6N56--
Transistor Type2 N-Channel--
Width1.2 mm--
BrandToshiba--
Product TypeMOSFET--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time8.5 ns, 8.5 ns--
Typical Turn On Delay Time5.5 ns, 5.5 ns--
Unit Weight0.000289 oz--
Package Case-SOT-563, SOT-666-
Operating Temperature-150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-ES6-
FET Type-2 N-Channel (Dual)-
Power Max-150mW-
Drain to Source Voltage Vdss-20V-
Input Capacitance Ciss Vds-55pF @ 10V-
FET Feature-Logic Level Gate, 1.5V Drive-
Current Continuous Drain Id 25°C-800mA-
Rds On Max Id Vgs-235 mOhm @ 800mA, 4.5V-
Vgs th Max Id-1V @ 1mA-
Gate Charge Qg Vgs-1nC @ 4.5V-
Manufacturer Part # Description RFQ
Toshiba
Toshiba
SSM6N56FE,LM MOSFET Small-signal MOSFET N-Channel
SSM6N56FE New and Original
SSM6N56FELMCB New and Original
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