 |  | | |
| PartNumber | SSM6N57NU,LF | SSM6N57NU,LF(T | SSM6N57NU,LF(T) |
| Description | MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | UDFN-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 4 A | - | - |
| Rds On Drain Source Resistance | 82 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Qg Gate Charge | 3.2 nC | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Dual | - | - |
| Packaging | Reel | - | - |
| Height | 0.75 mm | - | - |
| Length | 2 mm | - | - |
| Series | SSM6N57 | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Width | 2 mm | - | - |
| Brand | Toshiba | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
SSM6N57NU,LF | MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS | |
| SSM6N57NU,LF | Darlington Transistors MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS | ||
| SSM6N57NU,LF(T | New and Original | ||
| SSM6N57NU,LF(T) | New and Original |