| PartNumber | SSM6N7002CFU,LF | SSM6N7002BFE,LM | SSM6N7002FUTE85LF |
| Description | MOSFET Small-Signal MOSFET 2-in-1 | MOSFET ES6 S-MOS TRSTR Pd: 0.15W F: 1MHz | MOSFET SMOS |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-363-6 | ES6-6 | SOT-363-6 |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
| Id Continuous Drain Current | 170 mA | 200 mA | 200 mA |
| Rds On Drain Source Resistance | 3.9 Ohms, 3.9 Ohms | 2.1 Ohms | 3.3 Ohms |
| Vgs th Gate Source Threshold Voltage | 1.1 V | - | 2.5 V |
| Vgs Gate Source Voltage | 4.5 V | 10 V | 20 V |
| Qg Gate Charge | 0.27 nC, 0.27 nC | - | - |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 285 mW | 150 mW | 300 mW |
| Configuration | Dual | Dual | Dual |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Reel | Reel | Reel |
| Height | 0.9 mm | 0.55 mm | 0.9 mm |
| Length | 2 mm | 1.6 mm | 2 mm |
| Series | SSM6N7002 | SSM6N7002 | SSM6N7002 |
| Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel |
| Width | 1.25 mm | 1.2 mm | 1.25 mm |
| Brand | Toshiba | Toshiba | Toshiba |
| Fall Time | 24 ns, 24 ns | - | 72 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 3 ns, 3 ns | - | 72 ns |
| Factory Pack Quantity | 3000 | 4000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 7 ns, 7 ns | - | 69 ns |
| Typical Turn On Delay Time | 2 ns, 2 ns | - | 18 ns |
| Unit Weight | 0.000265 oz | - | 0.000265 oz |
| Minimum Operating Temperature | - | - | - 55 C |
| Product | - | - | MOSFET Small Signal |
| Forward Transconductance Min | - | - | 170 mS |