SSM6N7002BFE

SSM6N7002BFE,LM vs SSM6N7002BFE vs SSM6N7002BFE(T5L

 
PartNumberSSM6N7002BFE,LMSSM6N7002BFESSM6N7002BFE(T5L
DescriptionMOSFET ES6 S-MOS TRSTR Pd: 0.15W F: 1MHz
ManufacturerToshibaGP/Toshiba-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseES6-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current200 mA--
Rds On Drain Source Resistance2.1 Ohms--
Vgs Gate Source Voltage10 V--
Pd Power Dissipation150 mW--
ConfigurationDual--
PackagingReel--
Height0.55 mm--
Length1.6 mm--
SeriesSSM6N7002--
Transistor Type2 N-Channel--
Width1.2 mm--
BrandToshiba--
Product TypeMOSFET--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Manufacturer Part # Description RFQ
Toshiba
Toshiba
SSM6N7002BFE,LM MOSFET ES6 S-MOS TRSTR Pd: 0.15W F: 1MHz
SSM6N7002BFE,LM MOSFET ES6 S-MOS TRSTR Pd: 0.15W F: 1MHz
SSM6N7002BFE New and Original
SSM6N7002BFE,LM(B New and Original
SSM6N7002BFE,LM(T New and Original
SSM6N7002BFE(T5L New and Original
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