SSN1N

SSN1N45BTA vs SSN1N45BBU vs SSN1N45B

 
PartNumberSSN1N45BTASSN1N45BBUSSN1N45B
DescriptionMOSFET N-CH/450V/0.5A/BFETMOSFET N-CH/450V/0.5A/BFET
ManufacturerON SemiconductorON SemiconductorFairchild Semiconductor
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-92-3TO-92-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage450 V450 V-
Id Continuous Drain Current500 mA500 mA-
Rds On Drain Source Resistance4.25 Ohms4.25 Ohms-
Vgs Gate Source Voltage50 V50 V-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation900 mW900 mW-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingAmmo PackBulkCut Tape (CT) Alternate Packaging
Height5.33 mm5.33 mm-
Length5.2 mm5.2 mm-
ProductMOSFET Small SignalMOSFET Small Signal-
SeriesSSN1N45B--
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypeMOSFETMOSFET-
Width4.19 mm4.19 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Forward Transconductance Min0.7 S0.7 S-
Fall Time21 ns21 ns21 ns
Product TypeMOSFETMOSFET-
Rise Time21 ns21 ns21 ns
Factory Pack Quantity20001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time23 ns23 ns23 ns
Typical Turn On Delay Time7.5 ns7.5 ns7.5 ns
Part # AliasesSSN1N45BTA_NLSSN1N45BBU_NL-
Unit Weight0.008466 oz0.006314 oz0.008466 oz
Part Aliases--SSN1N45BTA_NL
Package Case--TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Through Hole
Supplier Device Package--TO-92-3
FET Type--MOSFET N-Channel, Metal Oxide
Power Max--900mW
Drain to Source Voltage Vdss--450V
Input Capacitance Ciss Vds--240pF @ 25V
FET Feature--Standard
Current Continuous Drain Id 25°C--500mA (Tc)
Rds On Max Id Vgs--4.25 Ohm @ 250mA, 10V
Vgs th Max Id--3.7V @ 250μA
Gate Charge Qg Vgs--8.5nC @ 10V
Pd Power Dissipation--900 mW
Vgs Gate Source Voltage--50 V
Id Continuous Drain Current--500 mA
Vds Drain Source Breakdown Voltage--450 V
Rds On Drain Source Resistance--4.25 Ohms
Forward Transconductance Min--0.7 S
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
SSN1N45BTA MOSFET N-CH/450V/0.5A/BFET
SSN1N45BBU MOSFET N-CH/450V/0.5A/BFET
SSN1N45B New and Original
ON Semiconductor
ON Semiconductor
SSN1N45BBU MOSFET N-CH 450V 500MA TO-92
SSN1N45BTA MOSFET N-CH 450V 500MA TO-92
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