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| PartNumber | SSN1N45BTA | SSN1N45BBU | SSN1N45B |
| Description | MOSFET N-CH/450V/0.5A/BFET | MOSFET N-CH/450V/0.5A/BFET | |
| Manufacturer | ON Semiconductor | ON Semiconductor | Fairchild Semiconductor |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-92-3 | TO-92-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 450 V | 450 V | - |
| Id Continuous Drain Current | 500 mA | 500 mA | - |
| Rds On Drain Source Resistance | 4.25 Ohms | 4.25 Ohms | - |
| Vgs Gate Source Voltage | 50 V | 50 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 900 mW | 900 mW | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Ammo Pack | Bulk | Cut Tape (CT) Alternate Packaging |
| Height | 5.33 mm | 5.33 mm | - |
| Length | 5.2 mm | 5.2 mm | - |
| Product | MOSFET Small Signal | MOSFET Small Signal | - |
| Series | SSN1N45B | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | MOSFET | - |
| Width | 4.19 mm | 4.19 mm | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Forward Transconductance Min | 0.7 S | 0.7 S | - |
| Fall Time | 21 ns | 21 ns | 21 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 21 ns | 21 ns | 21 ns |
| Factory Pack Quantity | 2000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 23 ns | 23 ns | 23 ns |
| Typical Turn On Delay Time | 7.5 ns | 7.5 ns | 7.5 ns |
| Part # Aliases | SSN1N45BTA_NL | SSN1N45BBU_NL | - |
| Unit Weight | 0.008466 oz | 0.006314 oz | 0.008466 oz |
| Part Aliases | - | - | SSN1N45BTA_NL |
| Package Case | - | - | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | TO-92-3 |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 900mW |
| Drain to Source Voltage Vdss | - | - | 450V |
| Input Capacitance Ciss Vds | - | - | 240pF @ 25V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 500mA (Tc) |
| Rds On Max Id Vgs | - | - | 4.25 Ohm @ 250mA, 10V |
| Vgs th Max Id | - | - | 3.7V @ 250μA |
| Gate Charge Qg Vgs | - | - | 8.5nC @ 10V |
| Pd Power Dissipation | - | - | 900 mW |
| Vgs Gate Source Voltage | - | - | 50 V |
| Id Continuous Drain Current | - | - | 500 mA |
| Vds Drain Source Breakdown Voltage | - | - | 450 V |
| Rds On Drain Source Resistance | - | - | 4.25 Ohms |
| Forward Transconductance Min | - | - | 0.7 S |