PartNumber | SSN1N45BTA | SSN1N45BBU | SSN1N45B |
Description | MOSFET N-CH/450V/0.5A/BFET | MOSFET N-CH/450V/0.5A/BFET | |
Manufacturer | ON Semiconductor | ON Semiconductor | Fairchild Semiconductor |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-92-3 | TO-92-3 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 450 V | 450 V | - |
Id Continuous Drain Current | 500 mA | 500 mA | - |
Rds On Drain Source Resistance | 4.25 Ohms | 4.25 Ohms | - |
Vgs Gate Source Voltage | 50 V | 50 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 900 mW | 900 mW | - |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Ammo Pack | Bulk | Cut Tape (CT) Alternate Packaging |
Height | 5.33 mm | 5.33 mm | - |
Length | 5.2 mm | 5.2 mm | - |
Product | MOSFET Small Signal | MOSFET Small Signal | - |
Series | SSN1N45B | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | MOSFET | MOSFET | - |
Width | 4.19 mm | 4.19 mm | - |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
Forward Transconductance Min | 0.7 S | 0.7 S | - |
Fall Time | 21 ns | 21 ns | 21 ns |
Product Type | MOSFET | MOSFET | - |
Rise Time | 21 ns | 21 ns | 21 ns |
Factory Pack Quantity | 2000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 23 ns | 23 ns | 23 ns |
Typical Turn On Delay Time | 7.5 ns | 7.5 ns | 7.5 ns |
Part # Aliases | SSN1N45BTA_NL | SSN1N45BBU_NL | - |
Unit Weight | 0.008466 oz | 0.006314 oz | 0.008466 oz |
Part Aliases | - | - | SSN1N45BTA_NL |
Package Case | - | - | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Through Hole |
Supplier Device Package | - | - | TO-92-3 |
FET Type | - | - | MOSFET N-Channel, Metal Oxide |
Power Max | - | - | 900mW |
Drain to Source Voltage Vdss | - | - | 450V |
Input Capacitance Ciss Vds | - | - | 240pF @ 25V |
FET Feature | - | - | Standard |
Current Continuous Drain Id 25°C | - | - | 500mA (Tc) |
Rds On Max Id Vgs | - | - | 4.25 Ohm @ 250mA, 10V |
Vgs th Max Id | - | - | 3.7V @ 250μA |
Gate Charge Qg Vgs | - | - | 8.5nC @ 10V |
Pd Power Dissipation | - | - | 900 mW |
Vgs Gate Source Voltage | - | - | 50 V |
Id Continuous Drain Current | - | - | 500 mA |
Vds Drain Source Breakdown Voltage | - | - | 450 V |
Rds On Drain Source Resistance | - | - | 4.25 Ohms |
Forward Transconductance Min | - | - | 0.7 S |