 |  | | |
| PartNumber | SSR1N60BTM | SSR1N60BTM-WS | SSR1N60BTM_F080 |
| Description | MOSFET N-Ch/600V/0.9a/12Ohm | MOSFET N-CH 600V 0.9A DPAK | MOSFET N-CH 600V 0.9A DPAK |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 900 mA | - | - |
| Rds On Drain Source Resistance | 12 Ohms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 2.39 mm | - | - |
| Length | 6.73 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 6.22 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 0.92 S | - | - |
| Fall Time | 35 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 45 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 25 ns | - | - |
| Typical Turn On Delay Time | 14 ns | - | - |
| Part # Aliases | SSR1N60BTM_NL | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
SSR1N60BTM | MOSFET N-Ch/600V/0.9a/12Ohm | |
| SSR1N60BTM_WS | IGBT Transistors MOSFET 600V 0.9A 12Ohm N-Channel | ||
ON Semiconductor |
SSR1N60BTM | MOSFET N-CH 600V 0.9A DPAK | |
| SSR1N60BTM-WS | MOSFET N-CH 600V 0.9A DPAK | ||
| SSR1N60BTM_F080 | MOSFET N-CH 600V 0.9A DPAK | ||
| SSR1N60BTM(WS) | New and Original | ||
| SSR1N60BTMWS | New and Original |