PartNumber | STB12NM60N | STB13005-1 | STB12NM60N-1 |
Description | MOSFET N ch 600V 0.005 Ohm 10A Pwr MOSFET | Bipolar Transistors - BJT H/V FST SWCH PW TRNS NPN | MOSFET N Ch 1500V 2.5A Hi Vltg Pwr MOSFET |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | Bipolar Transistors - BJT | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | Through Hole | Through Hole |
Package / Case | TO-263-3 | TO-262-3 | TO-262-3 |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | NPN | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | - | 600 V |
Id Continuous Drain Current | 10 A | - | 10 A |
Rds On Drain Source Resistance | 410 mOhms | - | 410 mOhms |
Vgs Gate Source Voltage | 25 V | - | 25 V |
Minimum Operating Temperature | - 55 C | - 65 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 90 W | 75 W | 90 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | - | Enhancement |
Packaging | Reel | Tube | - |
Height | 4.6 mm | 9.35 mm | 8.95 mm |
Length | 10.4 mm | 10.4 mm | 10 mm |
Series | STB12NM60 | STB13005 | STB12NM60 |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Width | 9.35 mm | 4.6 mm | 4.4 mm |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Fall Time | 10 ns | - | 10 ns |
Product Type | MOSFET | BJTs - Bipolar Transistors | MOSFET |
Rise Time | 9 ns | - | 9 ns |
Factory Pack Quantity | 1000 | 50 | 50 |
Subcategory | MOSFETs | Transistors | MOSFETs |
Typical Turn Off Delay Time | 60 ns | - | 60 ns |
Typical Turn On Delay Time | 15 ns | - | 15 ns |
Unit Weight | 0.139332 oz | 0.073511 oz | 0.050717 oz |
Collector Emitter Voltage VCEO Max | - | 400 V | - |
Emitter Base Voltage VEBO | - | 9 V | - |
Maximum DC Collector Current | - | 4 A | - |
Continuous Collector Current | - | 4 A | - |
DC Collector/Base Gain hfe Min | - | 8 at 2 A, 5 V | - |