STB11NM

STB11NM60-1 vs STB11NM60FDT4 vs STB11NM60N-1

 
PartNumberSTB11NM60-1STB11NM60FDT4STB11NM60N-1
DescriptionMOSFET N-Ch 600 Volt 11 AmpMOSFET N-CH 600V 11A D2PAKMOSFET N-CH 600V 10A I2PAK
ManufacturerSTMicroelectronicsSTST
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleSMD/SMT-
Package / CaseTO-262-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current11 A--
Rds On Drain Source Resistance450 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation160 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeReel-
Height8.95 mm--
Length10 mm--
SeriesSTB11NM60STB11NM60-
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFET--
Width4.4 mm--
BrandSTMicroelectronics--
Forward Transconductance Min5.2 S--
Fall Time11 ns15 ns-
Product TypeMOSFET--
Rise Time20 ns16 ns-
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time6 ns--
Typical Turn On Delay Time20 ns20 ns-
Unit Weight0.050717 oz0.139332 oz-
Package Case-TO-252-3-
Pd Power Dissipation-160 W-
Vgs Gate Source Voltage-30 V-
Id Continuous Drain Current-11 A-
Vds Drain Source Breakdown Voltage-600 V-
Rds On Drain Source Resistance-450 mOhms-
Forward Transconductance Min-5.2 S-
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STB11NM80T4 MOSFET N-Ch 800 Volt 11 Amp Power MDmesh
STB11NM60T4 MOSFET N-Ch 600 Volt 11 Amp
STB11NM60-1 MOSFET N-Ch 600 Volt 11 Amp
STB11NM60T4 MOSFET N-CH 650V 11A D2PAK
STB11NM60FDT4 MOSFET N-CH 600V 11A D2PAK
STB11NM60N-1 MOSFET N-CH 600V 10A I2PAK
STB11NM60-1 MOSFET N-CH 650V 11A I2PAK
STB11NM80T4 MOSFET N-CH 800V 11A D2PAK
STB11NM60 New and Original
STB11NM60A New and Original
STB11NM60A-1 New and Original
STB11NM60FD-1 New and Original
STB11NM65N MOSFET N-Channel 650V Pwr Mosfet
STB11NM80 New and Original
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