PartNumber | STB12NM50ND | STB12NM50FDT4 | STB12NM50N |
Description | MOSFET N-channel 500 V 11 A Fdmesh | MOSFET N-Ch 500 Volt 12 Amp | MOSFET N-CH 500V 11A D2PAK |
Manufacturer | STMicroelectronics | STMicroelectronics | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-263-3 | TO-263-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 500 V | 500 V | - |
Id Continuous Drain Current | 11 A | 12 A | - |
Rds On Drain Source Resistance | 380 mOhms | 400 mOhms | - |
Pd Power Dissipation | 100 W | 160 W | - |
Configuration | Single | Single | - |
Packaging | Reel | Reel | - |
Series | STB12NM50ND | STP12NM50FD | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | STMicroelectronics | STMicroelectronics | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
Vgs Gate Source Voltage | - | 30 V | - |
Minimum Operating Temperature | - | - 65 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Channel Mode | - | Enhancement | - |
Height | - | 4.6 mm | - |
Length | - | 10.4 mm | - |
Type | - | MOSFET | - |
Width | - | 9.35 mm | - |
Forward Transconductance Min | - | 9.8 S | - |
Fall Time | - | 18 ns | - |
Rise Time | - | 10 ns | - |
Typical Turn Off Delay Time | - | 39 ns | - |
Typical Turn On Delay Time | - | 19 ns | - |