PartNumber | STB18N60M6 | STB18N60DM2 | STB18N60M2 |
Description | MOSFET N-channel 600 V, 105 mOhm typ., 22 A MDmesh M6 Power MOSFET in a D2PAK package | MOSFET N-channel 600 V, 0.26 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a D2PAK package | MOSFET N-CH 600V 0.255Ohm 13A MDmesh M2 |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | D2PAK-3 | TO-263-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
Id Continuous Drain Current | 13 A | 12 A | 13 A |
Rds On Drain Source Resistance | 280 mOhms | 260 mOhms | 255 mOhms |
Vgs th Gate Source Threshold Voltage | 3.25 V | 3 V | 3 V |
Vgs Gate Source Voltage | 25 V | 25 V | 25 V |
Qg Gate Charge | 16.8 nC | 20 nC | 21.5 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 110 W | 90 W | 110 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | - |
Tradename | MDmesh | MDmesh | - |
Packaging | Reel | Reel | Reel |
Series | STx18 | STB18N60DM2 | STB18N60M2 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Fall Time | 9 ns | 32.5 ns | 10.6 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 7 ns | 8 ns | 9 ns |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 28 ns | 9.5 ns | 47 ns |
Typical Turn On Delay Time | 16 ns | 13.5 ns | 12 ns |
Forward Transconductance Min | - | - | - |
Unit Weight | - | 0.079014 oz | 0.139332 oz |