STB21NM60N

STB21NM60ND vs STB21NM60N vs STB21NM60N-1

 
PartNumberSTB21NM60NDSTB21NM60NSTB21NM60N-1
DescriptionMOSFET N-channel 600V, 17A FDMesh IIMOSFET N-Ch 600 V 0.19 Ohm 17 A 2nd Gen MDmeshMOSFET N-CH 600V 17A I2PAK
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current17 A17 A-
Rds On Drain Source Resistance220 mOhms190 mOhms-
Vgs Gate Source Voltage25 V25 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation140 W140 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height4.6 mm4.6 mm-
Length10.4 mm10.4 mm-
SeriesSTB21NM60NDSTW21NM60N-
Transistor Type1 N-Channel1 N-Channel-
Width9.35 mm9.35 mm-
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time48 ns31 ns-
Product TypeMOSFETMOSFET-
Rise Time16 ns15 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time70 ns84 ns-
Typical Turn On Delay Time18 ns22 ns-
Unit Weight0.139332 oz0.139332 oz-
Type-Power MOSFET-
Forward Transconductance Min-12 S-
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STB21NM60ND MOSFET N-channel 600V, 17A FDMesh II
STB21NM60N MOSFET N-Ch 600 V 0.19 Ohm 17 A 2nd Gen MDmesh
STB21NM60ND IGBT Transistors MOSFET N-channel 600V, 17A FDMesh II
STB21NM60N MOSFET N-CH 600V 17A D2PAK
STB21NM60N-1 MOSFET N-CH 600V 17A I2PAK
STB21NM60ND-CUT TAPE New and Original
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