PartNumber | STB21NM60ND | STB21NM60N | STB21NM60N-1 |
Description | MOSFET N-channel 600V, 17A FDMesh II | MOSFET N-Ch 600 V 0.19 Ohm 17 A 2nd Gen MDmesh | MOSFET N-CH 600V 17A I2PAK |
Manufacturer | STMicroelectronics | STMicroelectronics | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-263-3 | TO-263-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
Id Continuous Drain Current | 17 A | 17 A | - |
Rds On Drain Source Resistance | 220 mOhms | 190 mOhms | - |
Vgs Gate Source Voltage | 25 V | 25 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 140 W | 140 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | - |
Height | 4.6 mm | 4.6 mm | - |
Length | 10.4 mm | 10.4 mm | - |
Series | STB21NM60ND | STW21NM60N | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 9.35 mm | 9.35 mm | - |
Brand | STMicroelectronics | STMicroelectronics | - |
Fall Time | 48 ns | 31 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 16 ns | 15 ns | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 70 ns | 84 ns | - |
Typical Turn On Delay Time | 18 ns | 22 ns | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
Type | - | Power MOSFET | - |
Forward Transconductance Min | - | 12 S | - |