 |  |  | |
| PartNumber | STB30NM60ND | STB30NM60N | STB30NM60FD 30NM60FD |
| Description | MOSFET N-channel 600V, 25A FDMesh II | IGBT Transistors MOSFET N-channel 600V, 25A Power II Mdmesh | |
| Manufacturer | STMicroelectronics | ST | - |
| Product Category | MOSFET | IC Chips | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 25 A | - | - |
| Rds On Drain Source Resistance | 130 mOhms | - | - |
| Vgs Gate Source Voltage | 25 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 190 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Series | STB30NM60ND | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | STMicroelectronics | - | - |
| Fall Time | 75 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 50 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 110 ns | - | - |
| Typical Turn On Delay Time | 20 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
STMicroelectronics |
STB30NM60ND | MOSFET N-channel 600V, 25A FDMesh II | |
| STB30NM60N | IGBT Transistors MOSFET N-channel 600V, 25A Power II Mdmesh | ||
| STB30NM60ND | MOSFET N-CH 600V 25A D2PAK | ||
| STB30NM60ND 30NM60ND | New and Original | ||
| STB30NM60FD 30NM60FD | New and Original |