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| PartNumber | STB42N65M5 | STB42N60M2-EP |
| Description | MOSFET N-ch 650 Volt 33Amp | MOSFET N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a D2PAK package |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 600 V |
| Id Continuous Drain Current | 33 A | 34 A |
| Rds On Drain Source Resistance | 79 mOhms | 87 mOhms |
| Vgs Gate Source Voltage | 25 V | 25 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 190 W | 250 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | MDmesh | MDmesh |
| Packaging | Reel | Reel |
| Height | 4.6 mm | - |
| Length | 10.4 mm | - |
| Series | STB42N65M5 | STB42N60M2-EP |
| Transistor Type | 1 N-Channel | - |
| Width | 9.35 mm | - |
| Brand | STMicroelectronics | STMicroelectronics |
| Fall Time | 13 ns | 8 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 24 ns | 9.5 ns |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 65 ns | 96.5 ns |
| Typical Turn On Delay Time | 61 ns | 16.5 ns |
| Unit Weight | 0.139332 oz | 0.139332 oz |
| Vgs th Gate Source Threshold Voltage | - | 2 V |
| Qg Gate Charge | - | 55 nC |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
STMicroelectronics |
STB42N65M5 | MOSFET N-ch 650 Volt 33Amp | |
| STB42N60M2-EP | MOSFET N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a D2PAK package | ||
| STB42N65M5 | MOSFET N-CH 650V 33A D2PAK | ||
| STB42N60M2-EP | MOSFET N-CH 600V 34A EP D2PAK | ||
| STB42N65DM5 | New and Original |