STB50

STB50NF25 vs STB50NE10T4 vs STB50N25M5

 
PartNumberSTB50NF25STB50NE10T4STB50N25M5
DescriptionMOSFET Hi Vltg Pwr SCHOTTKY RECTIFMOSFET N-Ch 100 Volt 50 AmpMOSFET N-CH 250V 28A D2PAK
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage250 V100 V-
Id Continuous Drain Current45 A50 A-
Rds On Drain Source Resistance69 mOhms21 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 65 C-
Maximum Operating Temperature+ 150 C+ 175 C-
Pd Power Dissipation160 W180 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height4.6 mm4.6 mm-
Length10.4 mm10.4 mm-
SeriesSTB50NF25STB50NE10-
Transistor Type1 N-Channel1 N-Channel-
Width9.35 mm9.35 mm-
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time20 ns35 ns-
Product TypeMOSFETMOSFET-
Rise Time26 ns100 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time63 ns45 ns-
Typical Turn On Delay Time45 ns25 ns-
Unit Weight0.139332 oz0.139332 oz-
Type-MOSFET-
Forward Transconductance Min-35 S-
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STB50NF25 MOSFET Hi Vltg Pwr SCHOTTKY RECTIF
STB50NE10T4 MOSFET N-Ch 100 Volt 50 Amp
STB50NF25 IGBT Transistors MOSFET Hi Vltg Pwr SCHOTTKY RECTIF
STB50N25M5 MOSFET N-CH 250V 28A D2PAK
STB50NE10T4 MOSFET N-CH 100V 50A D2PAK
STB5000 New and Original
STB5050 New and Original
STB50N01 New and Original
STB50N60 New and Original
STB50NE08 New and Original
STB50NE10 50 A, 100 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
STB50NH02LT4 MOSFET N-Ch 24 Volt 50 Amp
STB50NE10L MOSFET
STB50NE10L-T4 New and Original
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